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AON3806 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AON3806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Standard Product AON3806is Pbfree (meets ROHS & Sony 259 specifications). AON3806L is a Green Product ordering option. AON3806 and AON3806L are electrically identical.
Features
VDS (V) = 20V ID = 7.3 A (VGS = 10V) RDS(ON) < 26m (VGS = 4.5V) RDS(ON) < 27m (VGS = 4V) RDS(ON) < 32m (VGS = 2.5V) ESD Rating: 2500V HBM
DFN 3x3 Top View Bottom View S2 G2 S1 G1 D2 D2 D1 D1 G1
D1
D2
G2
S1
S2
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
Maximum 20 12 7.3 5.8 30 2.2 1.4 -55 to 150
Units V V A
TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 43 77 36
Max 56 110 50
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AON3806 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, IG=250uA VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=4.5V, ID=7.3A RDS(ON) Static Drain-Source On-Resistance TJ=125C VGS=4V, ID=7.1A VGS=2.5V, ID=6.6A gFS VSD IS Forward Transconductance VDS=5V, ID=7.3A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current 12 0.5 30 21 29 22 26 30 0.74 1 2.5 1390 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 190 150 1.5 15.4 VGS=4.5V, VDS=10V, ID=7.3A 1.4 4 6.2 VGS=5V, VDS=10V, RL=1.4, RGEN=3 IF=7.3A, dI/dt=100A/s 11 40.5 10 15 5.1 26 35 27 32 0.71 1 Min 20 1 5 10 Typ Max Units V A A V V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS BVGSO VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=7.3A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 0: April 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AON3806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 3V 20 ID(A) 10V 4V VGS =2V 15 20 VDS=5V
ID(A) 10 VGS =1.5V 0 0 1 2 3 4 5 VDS(Volts)
10 125C 25C 0 0.0 0.5 1.0 1.5 2.0 2.5 VGS(Volts) Figure 2: Transfer Characteristics
5
c Figure 1: On-Regions Characteristi s
30 Normalize ON-Resistance VGS =2.5V 25 RDS(ON)(m)
1.6
VGS=2.5V ID=6.6A VGS=4.5V ID=7.3A
1.4
20
VGS =4.5V
1.2
15
1.0
10 0 5 10 15 20 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
60 ID=7.3A 50 RDS(ON)(m) 40 125C 30 25C 20 10 0 2 4 6 8 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1E+01 1E+00 1E-01 IS(A) 1E-02 1E-03 1E-04 1E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD(Volts) Figure 6: Body-Diode Characteristics 25C 125C
Alpha & Omega Semiconductor, Ltd.
AON3806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
2000 1600 Capacitance (pF) 1200 800 400 0 0 5 10 15 20 0 5 10 15 20 VDS(Volts) Figure 8: Capacitance Characteristics Crss Coss Ciss
5 4 VGS(Volts) 3 2 1 0 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=10V ID=7.3A
100.0
T J(Max)=150C T A=25C 10s Power (W) 100s 1ms
40 30 20 10 T J(Max)=150C T A=25C
ID (Amps)
10.0
1.0
RDS(ON) limited 1s 10s
0.1s
10ms
DC 10 VDS (Volts) 100
0.1 0.1 1
0 0.001
0.01
0.1
1
10
100
1000
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=T on/T T J,PK =T A+PDM.ZJA.RJA RJA=56C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD T on T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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